Theoretical Study of Electron Transport Characteristics in GaN. Boltzmann transport equation (BTE), High field transport theory, Velocity Overshoot, Monte-carlo simulation

      Аннотация: The book has been written with the intention to satisfy the needs of the researchers and students devoted to the study of electron transport properties in the material GaN. An up-to-date account of the theoretical research results as done by the authors has been incorporated in the book. It is the strong belief of the authors that the present book will be useful to all the electronic device physicists and engineers interested in the transport characteristics and applications of GaN and thus will pave the path for future research in this field.

Ключевые слова: GaN, Boltzmann transport equation (BTE), High field transport theory, Velocity Overshoot, Monte-carlo simulation.