Analysis of Strained Silicon MOSFETs. A TCAD Approach

      Аннотация: With limitations on the scaling of technology to improve performance, there is a need for new and different devices in VLSI and IC industry. Strained silicon MOSFET serves as a good replacement for bulk MOSFET due to its increased carrier mobility and easy process integration with present CMOS technology. In this work, different methodology to induce strain in the channel is presented and the performance of strained silicon MOSFET with various modifications to device structure like channel length, strain variation and gate material has been investigated by TCAD approach.

Ключевые слова: A TCAD Approach