Growth of ZnSe Nanoparticles by CVD. Preparation of ZnSe Nanoparticles

      Аннотация: Almost all material systems including metal, insulators and semiconductors show size dependent electronics or optical properties in the quantum size regime. Among these, the modification in the energy band gap of semiconductors is the most attractive one because of the fundamental as well as technological importance. The tunability of the band gap makes nanostructured materials useful for many applications. As one of the wide band gap semiconductor compound, Zinc Selenide has received much attention for the application in optoelectronic devices, such as blue laser diode, light emitting diodes, solar cells and IR optical windows. In the present investigations, Ni2+ doped PVA assisted ZnSe nanoparticles are prepared at room temperature by using chemical vapour deposition method.

Ключевые слова: Polymer, Synthesis., Transition metal ions, ZnSe, PVA, Semiconducting nanoparticles