Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide.

      Аннотация: Indium phosphide (InP) with a direct band gap of 1.35 eV is a promising material for photovoltaic solar energy conversion. The high radiation resistance and potentially high efficiency make InP solar cells excellent candidates for eventually using in space. InP and its related compounds have found potential applications in the design of high speed devices such as field effect transistors and high electron mobility transistor (FET, HEMT), charge coupled devices, solar and integrated optoelectronic devices such as radiation detectors and chemical sensors. InP schottky diodes are of special interest because of its special properties such as large mobility required for high speed devices, optimum bandgap for photovoltaic conversion and radiation resistance for solar cells.

Ключевые слова: indium phosphide, AFM, Schottly diodes, III-V Compound Semiconductors, Deep level Studies, Structural Analysis (XRD and AES)