Поиск по каталогу |
(строгое соответствие)
|
- Профессиональная
- Научно-популярная
- Художественная
- Публицистика
- Детская
- Искусство
- Хобби, семья, дом
- Спорт
- Путеводители
- Блокноты, тетради, открытки
Germanium-on-Insulator heterostructures via crystalline oxide buffers. Growth mode, structural, morphological and compositional properties of the Ge / cubic Pr2O3 / Si(111) heterostructure
В наличии
Местонахождение: Алматы | Состояние экземпляра: новый |
Бумажная
версия
версия
Автор: Alessandro Giussani
ISBN: 9783659355547
Год издания: 2013
Формат книги: 60×90/16 (145×215 мм)
Количество страниц: 204
Издательство: LAP LAMBERT Academic Publishing
Цена: 43812 тг
Положить в корзину
Способы доставки в город Алматы * комплектация (срок до отгрузки) не более 2 рабочих дней |
Самовывоз из города Алматы (пункты самовывоза партнёра CDEK) |
Курьерская доставка CDEK из города Москва |
Доставка Почтой России из города Москва |
Аннотация: Germanium-on-Insulator (GeOI) substrates combine the potential of the Silicon-on-Insulator (SOI) technology with the superior properties of Ge over Si in terms of a) charge carrier mobility (relevant for CMOS), b) optical bandgap and absorption coefficient (of impact for infra-red photodetectors and high-bandwidth optical interconnects), and c) lattice and thermal match with GaAs (of interest for integration of III-V based optoelectronics and photovoltaics on the mainstream Si platform). In this thesis, GeOI heterostructures were fabricated by molecular beam epitaxy on Si(111) wafers, employing praseodymium oxide ultra-thin films as a lattice intermediary and barrier. Growth mode, crystalline quality and defect density of the Ge epitaxial layers were investigated by means of a variety of in situ and ex situ methods, including sophisticated synchrotron x-ray diffraction techniques. The achievements are presented and discussed with respect to state-of-the-art GeOI technology. This work not only contributes to the vast field of Ge integration on Si, but could also be of interest to any material scientist dealing more generally with heteroepitaxy issues.
Ключевые слова: Silicon, XRD, Diffraction, Germanium, MBE, Molecular beam epitaxy, surface analysis, Buffer, synchrotron radiation, rare-earth oxides, heteroepitaxy, wafer engineering