Short Channel Effects and Analytical Modelling of DG-MOSFET.

      Аннотация: Since the invention of the bipolar transistor in 1947, there has been unprecedented growth of the semiconductor industry. In the last 20 years or so by far the strongest growth area of semiconductor industry has been in silicon Very Large Scale Intergration (VLSI) technology. The sustained growth in VLSI technology is fueled by continued shrinking of transistors to ever smaller dimensions. The benefits of miniaturization – higher packing densities, higher circuits speeds, and lower power dissipation-have been key in the evolutionary process leading to today’s computers and communication systems that offer superior performance dramatically reduced cost per function, and much reduced physical size, in comparison with their predecessors.

Ключевые слова: carbon nanotube, FinFET, Silicon On Insulator, Nano Devices, SHORT CHANNEL EFFECTS, double gate MOSFET, Moore's Law, Types of SOI, Types of DG-MOFET, Modelling of DG-MOSFET, Taur's Model, Surface Potential based Model