Fabrication and physical properties of CdS, ZnTe and ZnSe thin films.

      Аннотация: The II-VI compound semiconductor thin films (CdS, ZnTe and ZnSe) have been prepared by different methods such as electron beam vacuum evaporation, closed space sublimation and two-sourced thermal evaporation. The effects of deposition parameters are discussed in detail, structural, optical and electrical properties have been studied. In spite of that the main goal is to get comparatively high electrical conductivity of the films, the optical properties of the films were also very important from the application point of view. For reducing the resistivity of II-VI group semiconductor thin films, doping with different materials were performed using an ion exchange method. These films have been doped with (Cu, Ag) dopant to make it p-type. The ion exchange parameters such as solution temperature, concentration and immersion time, and its effect on the speed of the process and further on the status of the resulting films was carefully determined and analyzed. Also the effect of post heat treatment, on the physical properties and the composition of the resulting films are discussed in detail.

Ключевые слова: doping, optical, Electrical and Structural Properties, Semiconductor Thin films, doping, optical, Electrical and Structural Properties, Semiconductor Thin films