Synthesis and Characterisation of Oxide materials.

      Аннотация: This study helps to new researchers to learn about oxide semiconducting materials and its some properties, the doping of these two materials gave Indium tin oxide materials which has plenty of optoelectronic applications.Indium tin oxide (In2O3:Sn) is an n-type semiconducting material with wide band gap. With oxygen deficiency they become conducting whereas in stoichiometric condition insulators. The resistance variation when exposed to gaseous atmosphere plays crucial role in gas sensing applications of these materials. Gas sensing materials should have large surface area so that contacting area between the grains and gaseous molecules will be increased manifold, which will enhance the sensitivity and selectivity of sensors. In2O3, SnO2 and In2O3:Sn have been used in powder, thick film and thin film form as gas sensing material out of which powder based sensing elements provide a single step way of making low cost sensors. For these purpose powders of these semiconductor oxides are to be prepared with nano grains having large specific surface area.

Ключевые слова: SEMICONDUCTOR, Oxides, Transmission Electron Microscopy and Scanning Electron Microscopy