Quantized Semiconductor Structures. Theoretical Analysis of Few Electronic Properties

      Аннотация: This book is based on the theoretical study of low dimensional quantum effect devices having quantum confinements in one- two- and three- dimensions of the wave vector space such as quantum wells, metal oxide semiconductor field effect transistors, quantum wires, quantum dots, magnetic quantization, magneto quantum size effects, magnetic inversion layers, superlattices, quantum confined superlattices and field assisted transport in nanodevices. The electron transport in semiconductor devices is essentially determined by their respective band structures. Thus, the nature of the electronic properties become different in the aforementioned systems and varies with the magnitude of the quantizing magnetic field, the quantizing electric field and other types of quantum confined structures. Though various aspects of degenerate electron gases have extensively been reported, nevertheless, it appears from the literature that few other electronic properties of quantized structures have still greater promise for future research work. Keeping this in view, the author undertook theoretical investigations of few electronic properties of quantized semiconductor structures and related phenomena.

Ключевые слова: Einstein relation, Diffusivity–mobility ratio(DMR), Quantum Confined Structures, Quantum Dots (QDs), Quantum Wells (QWs), Quantum Well Wires (QWWs), Electron Energy Spectrum, Electronic Properties of Quantized Structures, Quantized Semiconductor Structures and Related Phenomena.