Ultra-Broadband InAs/InP Quantum-Dash Laser in Optical Communications. Device and System Level Investigation

      Аннотация: Quantum dash based laser diodes have attracted the focus of study and research in the very recent years due to what they possess of myriad advantages that make them ideal for several applications. Atop said advantages is their peculiar ultra-broadband emission as a result of the inherent inhomogeneous nature of the growth process of quantum dashes. This book investigates a novel multi-stacked chirped InAs/InP quantum dash-in-well laser that introduces an extra layer of inhomogeneity. The investigation of this laser is carried out at two levels: device level and system level. In device level, the fundamental laser diode characterization experiments are performed to extract its principle parameters. Thereafter, the investigation scope is shifted towards pulsed operation modes of higher-ordered duty-cycles and continuous wave operations. The device-level characterization is concluded by investigating the temperature dependent lasing spectral profiles at different geometrical configurations, current injections, and temperatures. Finally, the obtained results are used to optimize different operation parameters that achieved a successful implementation in optical communication systems.

Ключевые слова: Quantum Dash Laser, Optical Communications Broadband, InAs, InP