Performance Enhancement of SRAM FINFET using different Gate materials.

      Аннотация: This book describes the SRAM design concept in FinFET technologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs will be explored. Variety of SRAM design techniques will be presented exploiting the advantages of tied gate and independent gate controlled configurations. SRAM performance, power, and stability for FinFET devices are compared with conventional planar CMOS counterparts. Modeling the variability of FinFETs through statistics will be presented as well. The MOSFET device was compared with both Poly silicon and Molybdenum as gate material and the FinFET device was designed with different gate materials like Gold, Tungsten, Tantalum and Molybdenum and results were compared with Poly silicon gate material devices.

Ключевые слова: FinFET, ion, SNM, SRAM, Ioff, Gate materials