Charge Independent Modelling of Floating Gate MOSFET. Physical Modelling

      Аннотация: Floating- Gate MOSFET (FGMOSFET) is very popular electron device that used in many low-power circuits, opto-electronic systems and biomedical applications. A physical and compact model for FGMOSFET is highly needed to its flexibility usage. In this book, a physical modeling of the device is introduced rather than other popular models which have fitting parameters like Berkeley model (BSIM). A mathematical model for the parasitic capacitances needed for both DC and AC modeling of the device which introduced for 0.13um CMOS technology. The output and transfer characteristics were verified with the spice simulation model in Cadence, which is BSIM3v3. Also, the introduced model is a spice model for FGMOSFET and can be used in many circuit simulators. The model is based on n-channel FGMOSFET and can simply be modified to p-channel device by multiplying equations with negative unity.

Ключевые слова: Floating Gate MOSFET, Electron Devices Modelling, MOSFET Parasitic Capacitances