Modelling of Heat and Mass Transfer in Bulk Single Crystal Growth.

      Аннотация: Modelling of the industrial scale growth of bulk single crystals is considered. Heat transfer (conductive, convective, radiative) and related problems (the treatment of the unknown phase boundary fluid/crystal, the assessment of the quality of the grown crystals) encountered in melt and vapour growth of bulk single crystals as well as the corresponding macroscopic models are reviewed. The importance of the adequate description of optical phenomena (the semitransparency of oxide and some other crystals, the absorption, the scattering, the refraction, the presence of the diffuse andthe specular reflecting surfaces) and their effect on the global heat transfer in the growth facility is stressed. The implementation of the crystal growth models both {em in silico} (software development) and {em "in vivo"} (engineering education) are considered in the last part of the book.The problems of the code verification and model validation are discussed; the use of modelling in real time control of the growth processes are briefly considered.Differences between the crystal growth simulation codes intended for the research and for the industrial applications are indicated.

Ключевые слова: crystal growth, Mass Transfer