Thin Films. Study of Electronic and Optical Propertiesof Al1-xInxSb Thin Films

      Аннотация: Success of any recent technology, nowadays, is possible only through the accomplishment of semiconductor science advancements. Advancement in any industry, for the past few decades has been based on semiconductor technology and semiconductor devices. The advancement in semiconductor technology necessitates the improvement of new semiconductor materials and the new processing techniques, both in bulk and thin film. The book entitled “Study of Electronic and Optical Properties of Al1-xInxSb Thin Films” consist of measurement of electrical, thermo electrical and optical properties of Al1-xInxSb films deposited on glass substrate over thickness range of 1000 - 4000 ? by thermal evaporation technique. The properties measured are resistivity, Hall measurement, thermo electric power measurement, I-V characteristics, optical band gap and structural properties. From the data obtained, material parameters have been derived such as grain size, lattice parameters, bulk resistivity, mean free path, activation energy, carrier concentration, conduction type, band gap etc.

Ключевые слова: Bulk resistivity, Grain size, lattice parameters, Mean free path, Activation Energy, carrier concentration, Band gap