Multi-valley Semiconductors: Properties and Applications. Monograph

      Аннотация: The features of the effects arising in silicon and germanium single crystals under the influence of nuclear irradiation, various regimes of heat treatment, and uniaxial mechanical loads were considered; the regularities of the processes of formation and transformation of defects as a result of irradiation and thermal annealings were established; the specificity of interdefect and impurity-defect interactions was analyzed in connection with the presence of background and dopant impurities in crystals in a wide range of concentrations; the features of the influence of surface electronic processes on the formation of silicon surface-barrier detector structures were revealed; the slow regimes of etching for the manufacture of detectors of plane-parallel geometry were developed; the surface-barrier technology for manufacturing silicon spectrometric detectors was optimized. The monograph is intended for researchers and specialists in the field of radiation physics of semiconductors and solid-state physics.

Ключевые слова: Multi-valley Semiconductors, irradiation, defects, heat treatment, Surface-Barrier Structures