Mathematical Study of Quantum Hydrodynamic Models for Semiconductors.

      Аннотация: The macroscopic equations of quantum hydrodynamical (QHD) type are used to simulate the motion of charge transport in ultra submicron semiconductor devices, where quantum effects, depending on particle resonant tunnelling through potential barriers and charge density built-up in quantum wells, take place. Therefore, QHD models are important and dominative in the description of the motion of electrons or holes transport under the self-consistent electric field. For last two decades, there have been many mathematical studies about the QHD model for semiconductors in different settings. However, to best our knowledge, there seems not to be any result for the non-isentropic unipolar and bipolar QHD models. This book offers our recently results on the qualitive properties like the existence, uniqueness, relaxation-time limits and semi-classical limits for the non-isentropic unipolar and bipolar QHD models, quantum energy transpot (QET) models and quantum drift-diffusion (QDD) models which are induced by momentum relaxation-time limit and momentum/energy relaxation-time limits.

Ключевые слова: QHD, Mathematical study, Quantum Hydrodynamic Models, Semiconductors, macroscopic equations, quantum effects, QHD models