A sneak peek in AlGaN/GaN HEMT structures using SdH Oscillations. Let's unravel the unlimited potential of this characterization tool

      Аннотация: This book unravels and reaffirms the potential of magneto-transport measurements for being an excellent characterization technique. The book centers on the quantum magnetotransport measurements of AlGaN/GaN HEMT structures comprising 2DEG at the interface and some other heterostructures. The interpretation of experimental response of Longitudinal Magnetoresistance (Rxx) and Transverse Magnetoresistance or Hall Resistance (Rxy) measured as a function of temperature, T (ranging between 1.8 K and 300K) and perpendicular magnetic field, B (varied from 0-8 Tesla) has been discussed comprehensively along with detailed theoretical background and key concepts. The book highlights the importance of positive & negative sign of non-oscillatory background magnetoresistance (classical regime) over which SdH Oscillations (quantum-mechanical regime) are superimposed apart from the characterization utility of these oscillations. Estimation of interface roughness parameters, density of antidots, Rashba effect, detection & assessment of multiple types of disorders etc. in AlGaN/GaN are key features. This book will be a wonderful resource for researchers in the field of magnetotransport measurements.

Ключевые слова: Shubnikov de Haas (SdH) Oscillations, AlGaN/GaN HEMT structures, Negative Magnetoresistance, Interface Roughness, Antidots, scattering mechanism, disorder, Parallel Conduction, Magnetotransport Measurements, 2DEG